sot-563 sot- 5 63 plastic-encapsulate transistors EMZ1 dual transistor s (npn+pnp) features ? 2sc2412 and 2sa1037 are housed independently in a package ? transistor elements independen t, eliminating interference ? mounting cost and area can be cut in half 0 $ 5 . , 1 * = tr1 npn and tr2 pnp absolute maximum ratings (t a =25 unless otherwise noted) value symbol parameter tr1 tr2 unit v cbo collector-base voltage 60 -60 v v ceo collector-emitter voltage 50 -50 v v ebo emitter-base voltage 7 -6 v i c collector current 150 - 150 ma p c collector power dissipation 150(total)* mw r ja thermal resistance from junction to ambient 833 /w t j junction temperature 150 t stg storage temperature range -55~+150 *120mw per element must not be exceeded z1 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
tr1 npn electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =2ma,f=100mhz 180 mhz collector output capacitance c ob v cb =12v,i e =0,f=1mhz 3.5 pf tr2 pnp electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -6 v collector cut-off current i cbo v cb =-60v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v,i c =0 -0.1 a dc current gain h fe v ce =-6v,i c =-1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v transition frequency f t v ce =-12v,i c =-2ma,f=100mhz 140 mhz collector output capacitance c ob v cb =-12v,i e =0,f=1mhz 5 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,oct,2013
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